2DB1132P/Q/R

Document number: DS31142 Rev: 5 - 2

2 of 6

www.diodes.com

September 2011

© Diodes Incorporated

2DB1132P/Q/R

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-40

V

Collector-Emitter Voltage

-32

V

Emitter-Base Voltage

-5

V

Continuous Collector Current

-1

A

Peak Pulse Current (Note 4)

-2

A

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3)

1

W

Thermal Resistance, Junction to Ambient (Note 3)

125

°C/W

Thermal Resistance, Junction to Leads (Note 5)

22

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

3. For a device surface mounted on FR-4 PCB with minimum suggested pad layout; high coverage of single sided 1 oz copper, in still air conditions

4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle

≤ 2%.

5. Thermal resistance from junction to solder-point (at the end of the collector lead).

0

0.2

0.4

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Dissipation vs.

Ambient Temperature (Note 3)

A

0.6

0.8

1.0

0