2DB1188P/Q/R

Document number: DS31144 Rev. 5 - 2

4 of 6

www.diodes.com

November 2011

© Diodes Incorporated

2DB1188P/Q/R

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage

-40

⎯

⎯

V

Collector-Emitter Breakdown Voltage

-32

⎯

⎯

V

Emitter-Base Breakdown Voltage

-5

⎯

⎯

V

Collector Cutoff Current

⎯

⎯

-1

μA

Emitter Cutoff Current

⎯

⎯

-1

μA

ON CHARACTERISTICS (Note 5)

Collector-Emitter Saturation Voltage

⎯

-0.35

-0.8

V

DC Current Gain

2DB1188P

82

⎯

180

⎯

2DB1188Q

120

270

2DB1188R

180

390

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

⎯

120

⎯

MHz

f = 30MHz

Output Capacitance

⎯

20

⎯

pF

Notes:

5. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

01

2

3

4

5

-V

, COLLECTOR EMITTER VOLTAGE (V)

CE

Fig. 1 Typical Collector Current

vs. Collector-Emitter Voltage

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

I = -2mA

B

I = -4mA

B

I = -6mA

B

I = -8mA

B

I = -10mA

B

0.001

0.01

0.1

1

10

-I , COLLECTOR CURRENT (A)

C

Fig. 2 Typical DC Current Gain

vs. Collector Current (2DB1188Q)

0

50

100

150

200

250

300

350

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V

= -3V

CE

0.0001

0.001

0.01

0.1

1

10

-I , COLLECTOR CURRENT (A)

C

Fig. 3 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

0

0.1

0.2

0.3

0.4

0.5

0.6

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

I/I = 10

CB

0

0.2

0.4

0.6

0.8

1.0

1.2

0.0001

0.001

0.01

0.1

1

10

-I , COLLECTOR CURRENT (A)

C

Fig. 4 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

T = 85°C

A

T = 150°C

A

T = -55°C

A

T = 25°C

A

V

= -3V

CE