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2DB1386R 数据表(PDF) 2 Page - Diodes Incorporated

部件名 2DB1386R
功能描述  PNP SURFACE MOUNT TRANSISTOR
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

2DB1386R 数据表(HTML) 2 Page - Diodes Incorporated

  2DB1386R Datasheet HTML 1Page - Diodes Incorporated 2DB1386R Datasheet HTML 2Page - Diodes Incorporated 2DB1386R Datasheet HTML 3Page - Diodes Incorporated 2DB1386R Datasheet HTML 4Page - Diodes Incorporated 2DB1386R Datasheet HTML 5Page - Diodes Incorporated  
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2DB1386Q/R
Document number: DS31147 Rev. 6 - 2
2 of 5
www.diodes.com
November 2011
© Diodes Incorporated
2DB1386Q/R
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-6
V
Peak Pulse Current
ICM
-10
A
Continuous Collector Current
IC
-5
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 4) @ TA = 25°C
PD
1
W
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
RθJA
125
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Conditions
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V(BR)CBO
-30
⎯
⎯
V
IC = -50μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-20
⎯
⎯
V
IC = -1mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-6
⎯
⎯
V
IE = -50μA, IC = 0
Collector Cut-Off Current
ICBO
⎯
⎯
-0.5
μA
VCB = -20V, IE = 0
Emitter Cut-Off Current
IEBO
⎯
⎯
-0.5
μA
VEB = -5V, IC = 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-0.25
-1.0
V
IC = -4A, IB = -0.1A
DC Current Gain
2DB1386Q
hFE
120
⎯
270
⎯
IC = -0.5A, VCE = -2V
2DB1386R
180
⎯
390
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
⎯
55
⎯
pF
VCB = -20V, IE = 0, f = 1MHz
Current Gain-Bandwidth Product
fT
⎯
100
⎯
MHz
VCE = -6V, IE = 50mA,
f = 30MHz
Notes:
4. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com.
5. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
0
0.2
0.4
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 4)
A
0.6
0.8
1.0
0



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