DPLS4140E datasheet(2/4 Pages) DIODES

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DPLS4140E

Document number: DS31279 Rev. 3 - 2

2 of 4

www.diodes.com

October 2008

DPLS4140E

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V(BR)CBO

-180

-230

⎯

IC = -100μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-140

-190

⎯

IC = -10mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-7

-8.5

⎯

IE = -100μA, IC = 0

Collector Cutoff Current

ICBO

⎯

-20

-0.5

μA

VCB = -150V, IE = 0

VCB = -150V, IE = 0,

TA = 100°C

Emitter Cutoff Current

IEBO

⎯

-10

VEB = - 6V, IC = 0

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-40

-50

-75

-175

-60

-80

-120

-360

IC = -0.1A, IB = -5mA

IC = -0.5A, IB = -50mA

IC = -1A, IB = -100mA

IC = -3A, IB = -300mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

-910

-1040

IC = -3A, IB = -300mA

Base-Emitter Turn-On Voltage

VBE(ON)

⎯

-810

-930

IC = -3A, VCE = -5V

DC Current Gain

hFE

100

⎯

300

⎯

IC = -10mA, VCE = -5V

IC = -1A, VCE = -5V

IC = -3A, VCE = -5V

IC = -10A, VCE = -5V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

⎯

150

⎯

MHz

IC = -100mA, VCE = -10V,

f = 100MHz

Output Capacitance

Cobo

⎯

VCB = -10V, f = 1MHz

SWITCHING CHARACTERISTICS

Switching Times

ton

toff

⎯

430

⎯

IC = -1A, IB1 = -100mA

IB2 = 100mA, VCC = -50V

Notes:

4. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%

0.2

0.4

100

125

150

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)

0.6

0.8

1.0

-V

, COLLECTOR-EMITTER VOLTAGE (V)

Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage

0.2

0.4

0.6

0.8

I = -1mA

I = -2mA

I = -3mA

I = -4mA

I = -5mA

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