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36MB 数据表(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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36MB 数据表(HTML) 2 Page - Nell Semiconductor Co., Ltd |
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2 / 4 page ![]() SEMICONDUCTOR RoHS RoHS Page2of4 N High Power Products ell MAXIMUM RATINGS (T = 25°C unless otherwise noted) A PARAMETER V V SYMBOL 36MB UNIT 900 10 1100 1300 1700 800 1000 1200 1600 08 16 12 800 1000 1200 1600 V Maximumrepetitivepeakreversevoltage MaximumRSMvoltage(non-repetitvepeakreversevoltage) MaximumDCblockingvoltage Maximumaverageforwardrectifiedoutputcurrent(Fig.1) Peakforwardsurgecurrentsinglesine-wavesuperimposedon ratedload Rating(non-repetitive,fortgreaterthan1msandlessthan8.3ms) forfusing RMSisolationvoltagefromcasetoleads Operatingjunctionstoragetemperaturerange VRRM VRMS IFSM VDC IF(AV) VISO I t 2 T ,T J STG 2500 660 35 -55 to150 400 A s 2 A A V ºC ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A PARAMETER V µA SYMBOL 36MB UNIT 10 08 16 12 Maximuminstantaneousforwarddropperdiode MaximumreverseDCcurrentatratedDCblocking Typicaljunctioncapacitanceperdiode VF IR CJ 300 500 1.1 5 pF voltageperdiode TEST CONDITIONS IF =17.5A TA =25 C ° 4V,1MHz TA =150 C ° THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted) A PARAMETER °C/W SYMBOL 36MB UNIT 10 08 16 12 Typicalthermalresistance (1)Withheatsink RθJC (1) (2)Boltdownonheatsinkwithsiliconethermalcompoundbetweenbridgeandmountingsurfaceformaximumheattransferwith Notes #10screw 1.4 36MB |
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