8T06AI-SW datasheet(5/7 Pages) NELLSEMI

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SEMICONDUCTOR

8T Series RoHS

RoHS

100

ITM (A)

T =25°C

T =T max

T max.

Vto = 0.85 V

Rd = 50 mΩ

VTM(V)

ITSM (A)

Non repetitive

T initial=25°C

Repetitive

T =100°C

One cycle

t=20ms

Number of cycles

Fig.4 On-state characteristics (maximum values).

Fig.5 Surge peak on-state current versus number

of cycles.

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

100

1000

0.01

0.10

1.00

10.00

100

1000

tp (ms)

T initial=25°C

dI/dt limitation:

50A/µs

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

IGT

IH & IL

T (°C)

Fig.8-1 Relative variation of critical rate of decrease

of main current versus (dV/dt)c (typical values).

Snubberless & Logic Level Types

Fig.8-2 Relative variation of critical rate of

of main current versus (dV/dt)c

Standard Types

decrease

(typical values).

Fig.6 Non-repetitive surge peak on-state current

for a sinusoidal pulse with width tp < 10ms.

and corresponding value of l t.

Fig.7 Relative variation of gate trigger current,holding

current and latching current versus junction

temperature (typical values).

lTSM (A), l t(A s)

lGT,lH,lL[T ] / lGT,lH,lL [T =25°C]

I t

ITSM

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

CW/BW

(dV/dt)c (V/µs)

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

(dV/dt)c (V/µs)

0.1

1.0

10.0

100.0

0.1

1.0

10.0

100.0

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