BAS116LP3 datasheet(2/4 Pages) DIODES

2 / 4 page

BAS116LP3

Document number: DS35241 Rev. 5 - 2

2 of 4

www.diodes.com

January 2012

BAS116LP3

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

RMS Reverse Voltage

VR(RMS)

Forward Continuous Current (Note 4)

IFM

215

Repetitive Peak Forward Current

IFRM

500

Non-Repetitive Peak Forward Surge Current

@ t = 1.0

μs

@ t = 1.0ms

@ t = 1.0s

IFSM

4.0

1.0

0.5

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

250

Thermal Resistance Junction to Ambient Air (Note 4)

RθJA

500

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 5)

V(BR)R

⎯

IR = 100μA

Forward Voltage

⎯

0.75

0.9

1.0

1.15

0.95

1.10

1.20

1.35

IF = 1.0mA

IF = 10mA

IF = 50mA

IF = 150mA

Leakage Current (Note 5)

⎯

10.0

100

500

VR = 75V

VR = 1V, TJ = 150°C

VR = 75V, TJ = 150°C

Total Capacitance

⎯

1.6

3.0

VR = 0, f = 1.0MHz

Reverse Recovery Time

trr

⎯

120

3000

IF = IR = 10mA,

Irr = 0.1 x IR, RL = 100Ω

Notes:

4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.

5. Short duration pulse test used to minimize self-heating effect.

100

125

150

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Derating Curve, Total Package

100

150

200

250

300

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

0.4

0.8

1.2

1.6

BAS116LP3 数据表(PDF) 2 Page - Diodes Incorporated

BAS116LP3 数据表(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4

数据表下载

链接网址

BAS116LP3 数据表(PDF) 2 Page - Diodes Incorporated

BAS116LP3 数据表(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4

数据表 下载

链接网址

数据表下载