| 数据搜索系统,热门电子元器件搜索 |
|
AL5801 数据表(PDF) 4 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
AL5801 数据表(HTML) 4 Page - Diodes Incorporated |
|
4 / 11 page ![]() AL5801 Document number: DS35555 Rev. 3 - 2 4 of 11 www.diodes.com July 2012 © Diodes Incorporated AL5801 Pre-Bias Transistor Electrical Characteristics: (Q2) (@TA = +25°C, unless otherwise specified.) Characteristic (Note 10) Symbol Min Typ Max Unit Test Condition Input Voltage VI(off) 0.4 - - V VCC = 5V, IO = 100μA VI(on) - - 1.5 V VCC = 0.3V, IO = 5mA Output Voltage VO(on) - 0.05 0.3 V IO/II = 5mA/0.25mA Output Current IO(off) - - 0.5 μA VCC = 50V, VI = 0V DC Current Gain G1 80 - - - VO = 5V, IO = 10mA Input Resistance R1 3.2 4.7 6.2 k Ω - Resistance Ratio R2/R1 8 10 12 - - Notes: 10. Short duration pulse test used to minimize self-heating effect. Thermal Characteristics 0.2 0.4 0.6 0.8 1.2 0 25 50 75 100 125 150 TEMPERATURE (°C) Figure 2 Derating Curve 1.0 0 50mm x 50mm (2oz. FR4) 25mm x 25mm (2oz. FR4) 15mm x 15mm (2oz. FR4) 0.2 0.4 0.6 0.8 1.2 0 500 1,000 1,500 2,000 2,500 COPPER AREA (mm ) Figure 3 Area vs. Max Power 2 T = 25°C 2oz. FR4 A 1.0 0 100 120 140 160 180 0.0001 0.001 0.01 0.1 1 10 100 1,000 PULSE WIDTH (s) Figure 4 Transient Thermal Impedance T = 25°C 25mm x 25mm 1oz. FR4 A 80 60 40 20 0 D = 0.05 D = 0.1 Single Pulse D = 0.2 D = 0.5 |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |