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INA129MDREP 数据表(PDF) 2 Page - Texas Instruments |
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INA129MDREP 数据表(HTML) 2 Page - Texas Instruments |
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2 / 22 page ![]() A 1 A 2 A 3 40 kW 40 kW 40 kW 40 kW V IN 2 1 8 3 6 5 V IN R G V+ V- Ref V O G = 1 + 49.4 kW R G + 4 7 INA129 Over-Voltage Protection Over-Voltage Protection 24.7 kW 24.7 kW - INA129-EP SBOS508 – DECEMBER 2009 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION(1) TA PACKAGE(2) ORDERABLE PART NUMBER TOP-SIDE MARKING –55°C to 125°C SOIC-D INA129MDREP 129EP (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. (2) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package. ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) VALUE UNIT VS Supply voltage ±18 V Analog input voltage range ±40 V Output short-circuit (to ground) Continuous TA Operating temperature –55 to 125 °C TSTG Storage temperature range –55 to 125 °C TJ Junction temperature 150 °C Lead temperature (soldering, 10s) 300 °C (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. 2 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): INA129-EP |
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