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STLQ50M-R 数据表(PDF) 11 Page - STMicroelectronics |
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STLQ50M-R 数据表(HTML) 11 Page - STMicroelectronics |
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11 / 18 page ![]() STLQ50XX Application information 11/18 7.3 Protection The P-MOS pass element has an internal diode with anode connected to VO and cathode to VI. In case VO > VI the current will flow from output to the input without any limitation. In this case proper limiting network is recommended. The current limitation is automatically provided by the characteristics of the PMOS pass element (see typical characteristics), so the short circuit current is dependent on the input voltage. When considering the short circuit current take care, in any case, to not exceed the maximum power dissipation sustainable by the device. The STLQ50 features an internal thermal protection that linearly reduces the output current when the internal temperature increases, consequently, at a given load, also the output voltage decreases. The action of the thermal protection starts at 125 °C when the output voltage slightly decreases, while close to 163 °C the output voltage drops to 0 V. Since this is a linear control, sudden over current conditions can quickly rise the chip temperature without time for the thermal protection to act, so it cannot be used as a limitation for the output current. |
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