MCP79510 datasheet(35/50 Pages) MAS

35 / 50 page

 2012 Microchip Technology Inc.

Preliminary

DS22300A-page 35

MCP7952X/MCP7951X

10.0 ON-BOARD MEMORY

The MCP795XX has both on-board EEPROM memory

and battery-backed SRAM. The SRAM is arranged as

64 bytes and is retained when VCC supply is removed.

The EEPROM is organized as 256 or 128 bytes. The

EEPROM is nonvolatile and does not require VBAT sup-

ply for retention.

10.1

SRAM

The SRAM array is a battery-backed-up array of 64

bytes. The SRAM is accessed using the Read and

Write commands, starting at address 0x20h.

Upon power-up the SRAM locations are in an unde-

fined state but can be set to a known value using the

CLRRAM instruction (Figure 9-7).

10.1.1

SRAM/RTCC OPERATION

The MCP795XX contains a Real-Time Clock and Cal-

endar. The RTCC registers and SRAM array are

accessed using the same commands. The RTCC reg-

isters and SRAM array are powered internally from the

switched supply that is either connected to VCC or VBAT

supply. No external read/write operations are permitted

when the device is running from the VBAT supply.

Table 3-1 contains a list of the possible instruction

bytes and format for device operation.

10.1.2

READ SEQUENCE

The part is selected by pulling CS low. The 8-bit READ

instruction is transmitted to the MCP79520 followed by

the 8-bit address (A7 through A0). After the correct

READ instruction and address are sent, the data stored

in the memory at the selected address is shifted out on

the SO pin. The data stored in the memory at the next

address can be read sequentially by continuing to pro-

vide clock pulses. The internal Address Pointer is auto-

matically incremented to the next higher address after

each byte of data is shifted out.

As the RTCC registers are separate from the SRAM

array, when reading the RTCC registers set the

address will wrap back to the start of the RTCC regis-

ters. Also when an address within the SRAM array is

loaded the internal Address Pointer will wrap back to

the start of the SRAM array. The READ instruction can

be used to read the registers and array indefinitely by

continuing to clock the device. The read operation is

terminated by raising the CS pin (Figure 10-1).

10.1.3

WRITE SEQUENCE

As the RTCC registers and SRAM array do not require

the WREN sequence like the nonvolatile memory, the

user may proceed by setting the CS low, issuing the

WRITE instruction, followed by the address, and then

the data to be written. As no write cycle is required for

the RTCC registers and SRAM array the entire con-

tents can be written in a single command.

For the last data byte to be written to the RTCC regis-

ters and SRAM array, the CS must be brought high

after the last byte has been clocked in. If CS is brought

high at any other time, the last byte will not be written.

Refer to Figure 10-2 for more detailed illustrations on

the write sequence.

FIGURE 10-1:

READ SEQUENCE

SCK

23456789 10 11 12 13 14 15 16 17 18 19 20 21 22

A7 6

1A0

76543210

Instruction

Address Byte

Data Out

High-Impedance

Don’t Care

The address will rollover to the start of either the RTCC registers or SRAM array.

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