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FDMS8670AS 数据表(PDF) 6 Page - Texas Instruments

部件名 FDMS8670AS
功能描述  Complete DDR2, DDR3 and DDR3L Memory Power Solution Synchronous Buck
PDF  34 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

FDMS8670AS 数据表(HTML) 6 Page - Texas Instruments

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TPS51916
SLUSAE1D – DECEMBER 2010 – REVISED JUNE 2012
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range, VV5IN = 5 V, VLDOIN is connected to VDDQ output, VMODE= 0 V, VS3= VS5= 5 V
(unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
PROTECTIONS
ITRIP
TRIP source current
TA = 25°C, VTRIP = 0.4 V
9
10
11
μA
TRIP source current temperature
TCITRIP
4700
ppm/°C
coefficient(2)
VTRIP
VTRIP voltage range
0.2
3
V
VTRIP = 3.0 V
360
375
390
VOCL
Current limit threshold
VTRIP = 1.6 V
190
200
210
mV
VTRIP = 0.2 V
20
25
30
VTRIP = 3.0 V
–390
–375
–360
VOCLN
Negative current limit threshold
VTRIP = 1.6 V
–210
–200
–190
mV
VTRIP = 0.2 V
–30
–25
–20
VZC
Zero cross detection offset
0
mV
Wake-up
4.2
4.4
4.5
VUVLO
V5IN UVLO threshold voltage
V
Shutdown
3.7
3.9
4.1
VOVP
VDDQ OVP threshold voltage
OVP detect voltage
118%
120%
122%
tOVPDLY
VDDQ OVP propagation delay
With 100 mV over drive
430
ns
VUVP
VDDQ UVP threshold voltage
UVP detect voltage
66%
68%
70%
tUVPDLY
VDDQ UVP delay
1
ms
tUVPENDLY
VDDQ UVP enable delay
1.2
ms
VOOB
OOB Threshold voltage
108%
THERMAL SHUTDOWN
Shutdown temperature(2)
140
TSDN
Thermal shutdown threshold
°C
Hysteresis(2)
10
(2)
Ensured by design. Not production tested.
6
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Copyright © 2010–2012, Texas Instruments Incorporated



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