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LPC4074FBD80 数据表(PDF) 81 Page - NXP Semiconductors |
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LPC4074FBD80 数据表(HTML) 81 Page - NXP Semiconductors |
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81 / 123 page  LPC408X_7X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Objective data sheet Rev. 1 — 17 September 2012 81 of 123 NXP Semiconductors LPC408x/7x 32-bit ARM Cortex-M4 microcontroller 11. Dynamic characteristics 11.1 Flash memory [1] Number of program/erase cycles. [2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes. [1] EEPROM clock frequency = 375 kHz. Programming/erase times increase with decreasing EEPROM clock frequency. Table 13. Flash characteristics Tamb = 40 C to +85 C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Nendu endurance [1] 10000 100000 - cycles tret retention time powered 10 - - years unpowered 20 - - years ter erase time sector or multiple consecutive sectors 95 100 105 ms tprog programming time [2] 0.95 1 1.05 ms Table 14. EEPROM characteristics Tamb = 40 Cto+85 C; VDD(REG)(3V3) = 2.7 V to 3.6 V. Symbol Parameter Conditions Min Typ Max Unit fclk clock frequency 200 375 400 kHz Nendu endurance 100000 500000 - cycles tret retention time powered 10 - - years unpowered 10 - - years ter erase time 64 bytes [1] -1.8 - ms tprog programming time 64 bytes [1] -1.1 - ms |
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