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SST29EE010 数据表(PDF) 10 Page - Silicon Storage Technology, Inc

部件名 SST29EE010
功能描述  1 Mbit (128K x8) Page-Mode EEPROM
PDF  26 Pages
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制造商  SST [Silicon Storage Technology, Inc]
网页  http://www.sst.com/
标志 SST - Silicon Storage Technology, Inc

SST29EE010 数据表(HTML) 10 Page - Silicon Storage Technology, Inc

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Data Sheet
1 Mbit Page-Mode EEPROM
SST29EE010 / SST29LE010 / SST29VE010
©2001 Silicon Storage Technology, Inc.
S71061-07-000
6/01
304
AC CHARACTERISTICS
TABLE 10: READ CYCLE TIMING PARAMETERS FOR SST29EE010
Symbol
Parameter
SST29EE010-70
SST29EE010-90
Units
MinMax
MinMax
TRC
Read Cycle Time
70
90
ns
TCE
Chip Enable Access Time
70
90
ns
TAA
Address Access Time
70
90
ns
TOE
Output Enable Access Time
30
40
ns
TCLZ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
TCHZ1
CE# High to High-Z Output
20
30
ns
TOHZ1
OE# High to High-Z Output
20
30
ns
TOH1
Output Hold from Address Change
0
0
ns
T10.2 304
TABLE 11: READ CYCLE TIMING PARAMETERS FOR SST29LE010
Symbol
Parameter
SST29LE010-150
SST29LE010-200
Units
MinMax
MinMax
TRC
Read Cycle Time
150
200
ns
TCE
Chip Enable Access Time
150
200
ns
TAA
Address Access Time
150
200
ns
TOE
Output Enable Access Time
60
100
ns
TCLZ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
TCHZ1
CE# High to High-Z Output
30
50
ns
TOHZ1
OE# High to High-Z Output
30
50
ns
TOH1
Output Hold from Address Change
0
0
ns
T11.1 304
TABLE 12: READ CYCLE TIMING PARAMETERS FOR SST29VE010
Symbol
Parameter
SST29VE010-200
SST29VE010-250
Units
MinMax
MinMax
TRC
Read Cycle Time
200
250
ns
TCE
Chip Enable Access Time
200
250
ns
TAA
Address Access Time
200
250
ns
TOE
Output Enable Access Time
100
120
ns
TCLZ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
TCHZ1
CE# High to High-Z Output
50
50
ns
TOHZ1
OE# High to High-Z Output
50
50
ns
TOH1
Output Hold from Address Change
0
0
ns
T12.1 304



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