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SL3ICS1002 数据表(PDF) 17 Page - NXP Semiconductors |
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SL3ICS1002 数据表(HTML) 17 Page - NXP Semiconductors |
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17 / 56 page ![]() 139036 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet COMPANY PUBLIC Rev. 3.6 — 10 March 2011 139036 17 of 56 NXP Semiconductors SL3ICS1002/1202 UCODE G2XM and G2XL 9. Limiting values [1] Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical Characteristics section of this specification is not implied. [2] This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima. [3] For ESD measurement, the die chip has been mounted into a CDIP20 package. [4] see also Section 11.1 “Storage conditions” [5] see also Section 11.2 “Assembly conditions” Table 10. Limiting values[1][2] In accordance with the Absolute Maximum Rating System (IEC 60134) Voltages are referenced to RFN Symbol Parameter Conditions Min Max Unit Die Tstg storage temperature range -55 +125 °C Toper operating temperature -40 +85 °C VESD electrostatic discharge voltage Human body model [3] - ± 2kV TSSOP8, SOT1122 Tstg storage temperature range -55 +125 °C Ptot total power dissipation - 30 mW Toper operating temperature -40 +85 °C VESD electrostatic discharge voltage Human body model - ± 2kV SOT1040AA1, SOT1040AB2 Toper operating temperature [3][5] -40 +70 °C r.h.stg relative humidity - 60 % Tstg storage temperature range [4] +15 +30 °C VESD electrostatic discharge voltage Human body model - ± 2kV antenna bonding [5] label converting [5] |
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