MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

Enhancement--Mode Lateral MOSFETs

Designed for commercial and industrial broadband applications with

frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

applications.

350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.

Signal Type

(W)

f

(MHz)

(dB)

(%)

ACPR

(dBc)

DVB--T (8k OFDM)

18 Avg.

860

22.0

28.5

--62.0

on CCDF.

Signal Type

(W)

f

(MHz)

(dB)

(%)

Output

Signal PAR

(dB)

IMD

Shoulder

(dBc)

DVB--T (8k OFDM) 18 Avg.

470

21.6

26.8

8.6

--31.8

650

22.9

28.0

8.7

--34.4

860

21.9

28.3

7.9

--29.2

Features

• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,

90 Watts CW Output Power

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Internally Input Matched for Ease of Use

• Integrated ESD Protection

• Excellent Thermal Stability

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• 225°C Capable Plastic Package

• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.

R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +110

Vdc

Gate--Source Voltage

--6.0, +10

Vdc

Storage Temperature Range

-- 65 to +150

°C

Case Operating Temperature

150

°C

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

0.79

0.82

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF6V3090N

Rev. 1, 12/2011

Freescale Semiconductor

Technical Data

470--860 MHz, 90 W, 50 V

BROADBAND

RF POWER LDMOS TRANSISTORS

PARTS ARE SINGLE--ENDED

(Top View)

Drain

Figure 1. Pin Connections

Drain

Gate

Gate

Note: Exposed backside of the package is

the source terminal for the transistor.

CASE 1484--04, STYLE 1

TO--272 WB--4

PLASTIC

MRF6V3090NBR1(NBR5)

CASE 1486--03, STYLE 1

TO--270 WB--4

PLASTIC

MRF6V3090NR1(NR5)

MRF6V3090NR1

MRF6V3090NR5

MRF6V3090NBR1

MRF6V3090NBR5

© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.