Package outline

Page 2

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600mA General Purpose PNP Epitaxial

Planar Transistor

Features

collector-emitterbreakdien voltage.

(BV

= -60V@I =-10mA)

CEO

C

PNP silicon epitaxial planar transistor, is designed for general

purpose and amplifier applications.

FMBT2222A is recommended.

Capable of 225mW power dissipation.

Lead-free parts for green partner, exceeds environmental

standards of MIL-STD-19500 /228

•

•

•

Mechanical data

•

MIL-STD-750, Method 2026

Epoxy:UL94-V0 rated flame retardant

Molded plastic, SOT-23

Formosa MS

PARAMETER

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

Total device dissipation FR-5 board

(1)

Storage temperature

Operating temperature

CONDITIONS

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

D

T

J

T

STG

FMBT2907

-55 ~ +150

-65 ~ +150

-60

UNIT

V

V

V

mA

mW

o

A

Junction to ambient

R

θJA

P

D

Thermal resistance

O

T = 25 C

A

O

Derate above 25 C

O

mW/ C

Total device dissipation alumina

substrate(2)

P

D

mW

Junction to ambient

R

θJA

P

D

Thermal resistance

O

T = 25 C

A

O

Derate above 25 C

O

mW/ C

1.FR-5 = 1.0 X 0.75 X0.062 in.

2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.

FMBT2907A

-40

-60

-5.0

-600

556

225

1.8

417

300

2.4

FMBT2907 / FMBT2907A

Document ID

Issued Date

Revised Date

Revision

Page.

PNP Epitaxial Planar Transistor

SOT-23

Dimensions in inches and (millimeters)

0.035 (0.89)

0.051 (1.30)

0.063 (1.60)

0.047 (1.20)

0.108 (2.75)

0.083 (2.10)

0.027 (0.67)

0.013 (0.32)

(A)

(B)

(C)

DS-231112

2008/02/10

2011/07/21

D

9