TPIC2202

2CHANNEL COMMONSOURCE POWER DMOS ARRAY

SLIS017 − SEPTEMBER 1992

2−2

POST OFFICE BOX 655303

POST OFFICE BOX 1443

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DS Drain-source breakdown voltage

ID = 1 µA,

VGS = 0

60

V

VTGS

Gate-source threshold voltage

ID = 1 mA,

VDS = VGS

1.2

1.75

2.4

V

VDS(on)

Drain-source on-state voltage

ID = 7.5 A,

VGS = 15 V,

See Notes 3 and 4

0.68

0.94

V

IDSS

Zero-gate-voltage drain current

VDS = 48 V,

VGS = 0

TC = 25°C

0.07

1

A

IDSS

Zero-gate-voltage drain current

VDS = 48 V,

VGS = 0

TC = 125°C

1.3

10

µA

IGSSF

Forward gate current, drain short

circuited to source

VGS = 20 V,

VDS = 0

10

100

nA

IGSSR

Reverse gate current, drain short

circuited to source

VGS = − 20 V,

VDS = 0

10

100

nA

rDS(on)

Static drain-source on-state

VGS = 15 V,

ID = 7.5 A,

TC = 25°C

0.09

0.125

Ω

rDS(on)

Static drain-source on-state

resistance

VGS = 15 V,

ID = 7.5 A,

See Notes 3 and 4 and Figures 5 and 6

TC = 125°C

0.15

0.21

Ω

gfs

Forward transconductance

VDS = 15 V,

ID = 5 A,

See Notes 3 and 4

2.5

4.7

S

Ciss

Short-circuit input capacitance,

common source

490

Coss

Short-circuit output capacitance,

common source

VDS = 25 V,

VGS = 0,

f = 300 kHz

285

pF

Crss

Short-circuit reverse transfer

capacitance, common source

90

NOTES:

3. Technique should limit TJ − TC to 10°C maximum.

4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VSD

Forward on voltage

IS = 7.5 A,

VGS = 0,

di/dt = 100 A/ s,

0.8

1.3

V

trr

Reverse recovery time

IS = 7.5 A,

VDS = 48 V,

VGS = 0,

See Figure 1

di/dt = 100 A/

µs,

200

ns

QRR

Total source-drain diode charge

VDS = 48 V,

See Figure 1

1.5

µC

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

td(on)

Turn-on delay time

12

td(off)

Turn-off delay time

VDD = 25 V,

RL = 6.7 Ω,

ten = 10 ns,

100

ns

tr

Rise time

VDD = 25 V,

tdis = 10 ns,

RL = 6.7 Ω,

See Figure 2

ten = 10 ns,

43

ns

tf

Fall time

tdis = 10 ns,

See Figure 2

5

Qg

Total gate charge

VDD = 48 V,

ID = 2.5 A,

VGS = 10 V,

13.6

18

Qgs

Gate-source charge

VDD = 48 V,

See Figure 3

ID = 2.5 A,

VGS = 10 V,

8.3

11

nC

Qgd

Gate-drain charge

See Figure 3

5.3

7

nC

LD

Internal drain inductance

7

nH

LS

Internal source inductance

7

nH

thermal resistance

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

RθJA

Junction-to-ambient thermal resistance

All outputs with equal power

62.5

°C/W

RθJC

Junction-to-case thermal resistance

All outputs with equal power

2.4

°C/W

RθJC

Junction-to-case thermal resistance

One output dissipating power

3.3

°C/W