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VS-16TTS..FPPBF 数据表(PDF) 2 Page - Vishay Siliconix

部件名 VS-16TTS..FPPBF
功能描述  High Voltage Phase Control Thyristor, 16 A
PDF  7 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

VS-16TTS..FPPBF 数据表(HTML) 2 Page - Vishay Siliconix

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VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 10-Nov-11
2
Document Number: 94381
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TYP.
MAX.
Maximum average on-state current
IT(AV)
TC = 95 °C, 180° conduction, half sine wave
10
A
Maximum RMS on-state current
IRMS
16
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
10 ms sine pulse, rated VRRM applied
170
10 ms sine pulse, no voltage reapplied
200
Maximum I2t for fusing
I2t
10 ms sine pulse, rated VRRM applied
144
A2s
10 ms sine pulse, no voltage reapplied
200
Maximum I2
t for fusing
I2
t
t = 0.1 to 10 ms, no voltage reapplied
2000
A2
s
Maximum on-state voltage drop
VTM
10 A, TJ = 25 °C
1.4
V
On-state slope resistance
rt
TJ = 125 °C
24.0
m
Threshold voltage
VT(TO)
1.1
V
Maximum reverse and direct leakage current
IRM/IDM
TJ = 25 °C
VR = Rated VRRM/VDRM
0.5
mA
TJ = 125 °C
10
Holding current
IH
Anode supply = 6 V, resistive load, initial IT = 1 A
16TTS08FP, 16TTS12FP
-
100
Maximum latching current
IL
Anode supply = 6 V, resistive load
200
Maximum rate of rise of off-state voltage
dV/dt
500
V/μs
Maximum rate of rise of turned-on current
dI/dt
150
A/μs
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
PGM
8.0
W
Maximum average gate power
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum required DC gate current to trigger
IGT
Anode supply = 6 V, resistive load, TJ = - 10 °C
90
mA
Anode supply = 6 V, resistive load, TJ = 25 °C
60
Anode supply = 6 V, resistive load, TJ = 125 °C
35
Maximum required DC gate
voltage to trigger
VGT
Anode supply = 6 V, resistive load, TJ = - 10 °C
3.0
V
Anode supply = 6 V, resistive load, TJ = 25 °C
2.0
Anode supply = 6 V, resistive load, TJ = 125 °C
1.0
Maximum DC gate voltage not to trigger
VGD
TJ = 125 °C, VDRM = Rated value
0.2
Maximum DC gate current not to trigger
IGD
2.0
mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical turn-on time
tgt
TJ = 25 °C
0.9
μs
Typical reverse recovery time
trr
TJ = 125 °C
4
Typical turn-off time
tq
110



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