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VS-25TTS..FPPBF 数据表(PDF) 3 Page - Vishay Siliconix |
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VS-25TTS..FPPBF 数据表(HTML) 3 Page - Vishay Siliconix |
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3 / 7 page ![]() VS-25TTS..FPPbF Series, VS-25TTS..FP-M3 Series www.vishay.com Vishay Semiconductors Revision: 15-Nov-11 3 Document Number: 94384 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ, TStg - 40 to 125 °C Maximum thermal resistance, junction to case RthJC DC operation 1.5 °C/W Maximum thermal resistance, junction to ambient RthJA 62 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 1.5 Approximate weight 2g 0.07 oz. Mounting torque minimum 6 (5) kgf · cm (lbf · in) maximum 12 (10) Marking device Case style TO-220AB FULL-PAK (94/V0) 25TTS08FP 25TTS12FP 70 80 90 100 110 120 130 0 5 10 15 20 30° 60° 90° 120° 180° Conduc tion Angle Average On-state Current (A) 25TTS.. Series R (DC) = 1.5 °C/ W thJC 70 80 90 100 110 120 130 0 5 10 15 20 25 30 DC 30° 60° 90° 120° 180° Conduc tion Period Average On-state Current (A) 25TTS.. Series R (DC) = 1.5 °C/ W thJC 0 5 10 15 20 25 048 12 16 20 RMSLimit Conduction Angle Avera ge On-state Current (A) 180° 120° 90° 60° 30° 25TTS.. Series T = 125°C J 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 DC 180° 120° 90° 60° 30° RMSLimit Conduc tion Period Avera ge On-sta te Current (A) 25TTS.. Series T = 125°C J |
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