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ATP202 数据表(PDF) 2 Page - Sanyo Semicon Device

部件名 ATP202
功能描述  General-Purpose Switching Device Applications
PDF  7 Pages
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制造商  SANYO [Sanyo Semicon Device]
网页  https://www.sanyo-av.com/us/
标志 SANYO - Sanyo Semicon Device

ATP202 数据表(HTML) 2 Page - Sanyo Semicon Device

  ATP202_12 Datasheet HTML 1Page - Sanyo Semicon Device ATP202_12 Datasheet HTML 2Page - Sanyo Semicon Device ATP202_12 Datasheet HTML 3Page - Sanyo Semicon Device ATP202_12 Datasheet HTML 4Page - Sanyo Semicon Device ATP202_12 Datasheet HTML 5Page - Sanyo Semicon Device ATP202_12 Datasheet HTML 6Page - Sanyo Semicon Device ATP202_12 Datasheet HTML 7Page - Sanyo Semicon Device  
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ATP202
No. A1317-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=25A
10
17
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=25A, VGS=10V
912
mΩ
RDS(on)2
ID=13A, VGS=4.5V
14
20
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
1650
pF
Output Capacitance
Coss
285
pF
Reverse Transfer Capacitance
Crss
160
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
16
ns
Rise Time
tr
185
ns
Turn-OFF Delay Time
td(off)
93
ns
Fall Time
tf
93
ns
Total Gate Charge
Qg
VDS=15V, VGS=10V, ID=50A
27
nC
Gate-to-Source Charge
Qgs
7.5
nC
Gate-to-Drain “Miller” Charge
Qgd
4nC
Diode Forward Voltage
VSD
IS=50A, VGS=0V
0.97
1.2
V
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
ATP202-TL-H
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=25A
RL=0.6Ω
VDD=15V
VOUT
ATP202
VIN
10V
0V
VIN



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