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ST1200C..KP 数据表(PDF) 3 Page - Vishay Siliconix

部件名 ST1200C..KP
功能描述  Phase Control Thyristors (Stud Version), 1650 A
PDF  8 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

ST1200C..KP 数据表(HTML) 3 Page - Vishay Siliconix

  ST1200C..KP Datasheet HTML 1Page - Vishay Siliconix ST1200C..KP Datasheet HTML 2Page - Vishay Siliconix ST1200C..KP Datasheet HTML 3Page - Vishay Siliconix ST1200C..KP Datasheet HTML 4Page - Vishay Siliconix ST1200C..KP Datasheet HTML 5Page - Vishay Siliconix ST1200C..KP Datasheet HTML 6Page - Vishay Siliconix ST1200C..KP Datasheet HTML 7Page - Vishay Siliconix ST1200C..KP Datasheet HTML 8Page - Vishay Siliconix  
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Document Number: 94394
For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 23-Apr-10
3
ST1200C..KP Series
Phase Control Thyristors
(Stud Version), 1650 A
Vishay High Power Products
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TYP.
MAX.
Maximum peak gate power
PGM
TJ = TJ maximum, tp
≤ 5 ms
16
W
Maximum average gate power
PG(AV)
TJ = TJ maximum, f = 50 Hz, d% = 50
3
Maximum peak positive gate current
IGM
TJ = TJ maximum, tp
≤ 5 ms
3.0
A
Maximum peak positive gate voltage
+ VGM
20
V
Maximum peak negative gate voltage
- VGM
5.0
DC gate current required to trigger
IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200
-
mA
TJ = 25 °C
100
200
TJ = 125 °C
50
-
DC gate voltage required to trigger
VGT
TJ = - 40 °C
1.4
-
V
TJ = 25 °C
1.1
3.0
TJ = 125 °C
0.9
-
DC gate current not to trigger
IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10
mA
DC gate voltage not to trigger
VGD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to heatsink
RthJ-hs
DC operation single side cooled
0.0.42
K/W
DC operation double side cooled
0.021
Maximum thermal resistance,
case to heatsink
RthC-hs
DC operation single side cooled
0.006
DC operation double side cooled
0.003
Mounting force, ± 10 %
24 500
(2500)
N
(kg)
Approximate weight
425
g
Case style
See dimensions - link at the end of datasheet
A-24 (K-PUK)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.003
0.003
0.002
0.002
TJ = TJ maximum
K/W
120°
0.004
0.004
0.004
0.004
90°
0.005
0.005
0.005
0.005
60°
0.007
0.007
0.007
0.007
30°
0.012
0.012
0.012
0.012



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