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RN1908FE 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 RN1908FE
功能描述  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
PDF  6 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

RN1908FE 数据表(HTML) 2 Page - Toshiba Semiconductor

  RN1908FE Datasheet HTML 1Page - Toshiba Semiconductor RN1908FE Datasheet HTML 2Page - Toshiba Semiconductor RN1908FE Datasheet HTML 3Page - Toshiba Semiconductor RN1908FE Datasheet HTML 4Page - Toshiba Semiconductor RN1908FE Datasheet HTML 5Page - Toshiba Semiconductor RN1908FE Datasheet HTML 6Page - Toshiba Semiconductor  
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RN1907FE~RN1909FE
2007-11-01
2
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 50 V, IE = 0
⎯
⎯
100
Collector cut-off current
RN1907FE~1909FE
ICEO
VCE = 50 V, IB = 0
⎯
⎯
500
nA
RN1907FE
VEB = 6 V, IC = 0
0.081
⎯
0.15
RN1908FE
VEB = 7 V, IC = 0
0.078
⎯
0.145
Emitter cut-off current
RN1909FE
IEBO
VEB = 15 V, IC = 0
0.167
⎯
0.311
mA
RN1907FE
80
⎯
⎯
RN1908FE
80
⎯
⎯
DC current gain
RN1909FE
hFE
VCE = 5 V, IC = 10 mA
70
⎯
⎯
Collector-emitter
saturation voltage
RN1907FE~1909FE
VCE (sat)
IC = 5 mA,
IB = 0.25 mA
⎯
0.1
0.3
V
RN1907FE
0.7
⎯
1.8
RN1908FE
1.0
⎯
2.6
Input voltage (ON)
RN1909FE
VI (ON)
VCE = 0.2 V, IC = 5 mA
2.2
⎯
5.8
V
RN1907FE
0.5
⎯
1
RN1908FE
0.6
⎯
1.16
Input voltage (OFF)
RN1909FE
VI (OFF)
VCE = 5 V, IC = 0.1 mA
1.5
⎯
2.6
V
Transition frequency
RN1907FE~1909FE
fT
VCE = 10 V, IC = 5 mA
⎯
250
⎯
MHz
Collector output
capacitance
RN1907FE~1909FE
Cob
VCB = 10 V, IE = 0,
f
= 1 MHz
⎯
3
6
pF
RN1907FE
7
10
13
RN1908FE
15.4
22
28.6
Input resistor
RN1909FE
R1
⎯
32.9
47
61.1
k
Ω
RN1907FE
0.191
0.213
0.232
RN1908FE
0.421
0.468
0.515
Resistor ratio
RN1909FE
R1/R2
⎯
1.92
2.14
2.35



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