RN2101ACT ~ RN2106ACT

2009-04-17

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2101ACT,RN2102ACT,RN2103ACT

RN2104ACT,RN2105ACT,RN2106ACT

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

• Extra small package (CST3) is applicable for extra high density

fabrication.

• Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

• Complementary to RN1101ACT to RN1106ACT

Equivalent Circuit and Bias Resistor Values

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

RN2101ACT to 2106ACT

−50

V

RN2101ACT to 2104ACT

−10

Emitter-base voltage

RN2105ACT, 2106ACT

−5

V

Collector current

−80

mA

Collector power dissipation

100*

mW

Junction temperature

150

°C

Storage temperature range

RN2101ACT to 2106ACT

−55 to 150

°C

* : Mounted on FR4 board (10 mm

× 10 mm × 1 mmt)

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Type No.

R1 (k

Ω)

R2 (k

Ω)

RN2101ACT

4.7

4.7

RN2102ACT

10

10

RN2103ACT

22

22

RN2104ACT

47

47

RN2105ACT

2.2

47

RN2106ACT

4.7

47

R1

B

C

E

CST3

1.BASE

2.EMITTER

3.COLLECOTR

３

１２

0.35±0.02

0.15±0.03

0.5±0.03

0.6±0.05

0.05±0.03