RN2103ACT datasheet(2/8 Pages) TOSHIBA

2 / 8 page

RN2101ACT ~ RN2106ACT

2009-04-17

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

ICBO

VCB = −50 V, IE = 0

⎯

−100

Collector cut-off current

RN2101ACT to 2106ACT

ICEO

VCE = −50 V, IB = 0

⎯

−500

RN2101ACT

−0.89

⎯

−1.33

RN2102ACT

−0.41

⎯

−0.63

RN2103ACT

−0.18

⎯

−0.29

RN2104ACT

VEB = −10 V, IC = 0

−0.088

⎯

−0.133

RN2105ACT

−0.085

⎯

−0.127

Emitter cut-off current

RN2106ACT

IEBO

VEB = −5 V, IC = 0

−0.08

⎯

−0.121

RN2101ACT

⎯

RN2102ACT

⎯

RN2103ACT

⎯

RN2104ACT

⎯

RN2105ACT

⎯

DC current gain

RN2106ACT

hFE

VCE = −5 V,

IC = −10 mA

⎯

RN2101ACT

IC = −5 mA,

IB = −0.5 mA

Collector-emitter

saturation voltage

RN2102ACT to 2106ACT

VCE (sat)

IC = −5 mA,

IB = −0.25 mA

⎯

−0.15

RN2101ACT

−1.2

⎯

−2.2

RN2102ACT

−1.2

⎯

−2.6

RN2103ACT

−1.3

⎯

−3.5

RN2104ACT

−1.5

⎯

−5.0

RN2105ACT

−0.6

⎯

−1.1

Input voltage (ON)

RN2106ACT

VI (ON)

VCE = −0.2 V,

IC = −5 mA

−0.7

⎯

−1.3

RN2101ACT to 2104ACT

−0.8

⎯

−1.5

Input voltage (OFF)

RN2105ACT, 2106ACT

VI (OFF)

VCE = −5 V,

IC = −0.1 mA

−0.5

⎯

−0.8

Collector output

capacitance

RN2101ACT to 2106ACT

Cob

VCB = −10 V, IE = 0,

= 1 MHz

⎯

0.9

⎯

RN2101ACT

3.76

4.7

5.64

RN2102ACT

RN2103ACT

17.6

26.4

RN2104ACT

37.6

56.4

RN2105ACT

1.76

2.2

2.64

Input resistor

RN2106ACT

⎯

3.76

4.7

5.64

RN2101ACT to 2104ACT

0.8

1.0

1.2

RN2105ACT

0.0376 0.0468 0.0562

Resistor ratio

RN2106ACT

R1/R2

⎯

0.08

0.1

0.12

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RN2103ACT 数据表(PDF) 2 Page - Toshiba Semiconductor

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