2N3019HR datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

2N3019HR

Electrical characteristics

Doc ID 15384 Rev 3

3/9

Electrical characteristics

Tcase = 25 °C unless otherwise specified

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off

current (IE = 0)

VCB = 90 V

VCB = 90 V, Tamb = 150 °C

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = 100 µA

140

V(BR)CEO

(1)

Pulsed duration = 300 µs, duty cycle

≤2 %

Collector-emitter

breakdown voltage

(IB = 0)

IC = 30 mA

V(BR)EBO

Emitter-base

breakdown voltage

(IC = 0)

IE = 100 µA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

0.2

0.5

VBE(sat)

(1)

Base-emitter

saturation voltage

IC = 150 mA, IB = 15 mA

1.1

hFE

(1)

DC current gain

IC = 0.1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 150 mA, VCE = 10 V

IC = 500 mA, VCE = 10 V

IC = 1 A, VCE = 10 V

IC = 150 mA, VCE = 10 V

Tamb = -65 °C

100

200

300

200

hfe

Small signal current

gain

VCE = 10 V, IC = 50 mA

f = 20 MHz

hfe

Small signal short

circuit forward current

transfer ratio

VCE = 5 V, IC = 1 mA

400

CCBO

Output capacitance

(IE = 0)

VCB = 10 V, f = 1 MHz

CIBO

Input capacitance

(IC = 0)

VEB = 0.5 V, f = 1 MHz

Noise figure

VCE = 10 V, IC = 100 µA

RG = 1 kΩ Bandwidth = 200 Hz

-4

tC(CB)

Collector- base

constant time

VCE = 10 V, IC = 10 mA

= 79.8 MHz

400

ton + toff

Pulse response

VCC = 20 V, see Figure 8

-30

2N3019HR 数据表(PDF) 3 Page - STMicroelectronics

2N3019HR 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表下载

链接网址

2N3019HR 数据表(PDF) 3 Page - STMicroelectronics

2N3019HR 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表 下载

链接网址

数据表下载