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2N5153HR 数据表(PDF) 3 Page - STMicroelectronics |
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2N5153HR 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() 2N5153HR Electrical characteristics Doc ID 15386 Rev 3 3/10 2 Electrical characteristics Tcase = 25 °C unless otherwise specified Table 5. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (IE = 0) VCB = - 60 V VCB = - 60 V Tamb = 150 °C -1 -10 µA µA IEBO Emitter cut-off current (IC = 0) VEB = - 4 V VEB = - 5.5 V -1 -1 µA mA ICEO Collector cut-off current (IB = 0) VCE = - 40 V -50 µA V(BR)CEO (1) 1. Pulsed duration = 300 µs, duty cycle ≤ 1.5% Collector-emitter breakdown voltage (IB = 0) IC = - 100 mA -80 V VCE(sat) (1) Collector-emitter saturation voltage IC = - 5 A IB = - 0.5 A -1.5 V VBE(sat) (1) Base-emitter saturation voltage IC = - 2.5 A IB = - 0.25 A IC = - 5 A IB = - 0.5 A -1.45 -2.2 V V hFE (1) DC current gain IC = - 50 mA VCE = - 5 V IC = - 2.5 A VCE = - 5 V IC = - 5 A VCE = - 5 V IC = - 2.5 A VCE = - 5 V Tamb = - 55 °C 50 70 40 35 200 hfe AC forward current transfer ratio VCE = - 5 V IC = - 500 mA f = 20 MHz 3.5 COBO Output capacitance IE = 0 VCB = - 10 V f = 1 MHz 250 pF ton Turn-on time VCC = - 30 V VBB = - 4 V Vin ≅ - 51 V IC = 5 A IB1 = - IB2 = - 0.5 A 0.5 µs toff Turn-off time VCC = - 30 V VBB = - 4 V Vin ≅ - 51 V IC = - 5 A IB1 = - IB2 = - 0.5 A 1.3 µs |
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