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L6398 数据表(PDF) 12 Page - STMicroelectronics |
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L6398 数据表(HTML) 12 Page - STMicroelectronics |
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12 / 16 page ![]() Bootstrap driver L6398 12/16 Doc ID 18199 Rev 3 where Qgate is the gate charge of the external power MOS, Rdson is the on resistance of the bootstrap DMOS and Tcharge is the charging time of the bootstrap capacitor. For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap DMOS is about 1 V, if the Tcharge is 5 μs. In fact: Equation 4 Vdrop has to be taken into account when the voltage drop on CBOOT is calculated: if this drop is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used. Figure 6. Bootstrap driver with high voltage fast recovery diode Figure 7. Bootstrap driver with internal charge pump V drop 30nC 5 μs --------------- 120 Ω 0.7V ∼ ⋅ = TO LOAD H.V. HVG LVG CBOOT DBOOT BOOT V CC OUT HVG LVG TO LOAD H.V. CBOOT V CC OUT BOOT |
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