STPS20100HR datasheet(3/10 Pages) STMICROELECTRONICS

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STPS20100HR

Characteristics

Doc ID 16953 Rev 1

3/10

Table 4.

Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C

Symbol

Characteristic

MIL-STD-750

test method

Test conditions

Values

Units

Min.

Max.

Reverse Current

4016

DC method, VR = 100 V

µA

VF1

(1)

Forward Voltage

4011

Pulse method, IF = 10 A

780

(1)

Pulse method, IF = 20 A

Capacitance

4001

VR = 10 V, F = 1 MHz

700

th(j-c)

Relative thermal impedance,

junction to case

3101

IH = 15 to 40 A, tH = 50 ms

IM = 50 mA, tmd = 100 µs

Calculate

ΔVF

°C/W

Pulse width

≤ 680µs, Duty Cycle ≤ 2%

Table 5.

Electrical measurements at high and low temperatures (per diode)

Symbol

Characteristic

MIL-STD-750

test method

Test conditions

Values

Units

Min.

Max.

Reverse Current

4016

Tcase = +125 (+0, -5) °C

DC method, VR = 100 V

-20

(1)

Forward Voltage

4011

Tcase = +125 (+0, -5) °C

pulse method, IF = 20 A

-900

Tcase = -55 (+5, -0) °C

pulse method, IF = 20 A

-1.1

Pulse width

≤ 680µs, Duty Cycle ≤ 2%

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