STPS40100HR datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STPS40100HR

2/9

Doc ID 17306 Rev 1

Characteristics

Table 2.

Absolute maximum ratings

Symbol

Characteristic

Value

Unit

FSM

Forward surge current (per diode)(1)

Sinusoidal pulse of 10 ms duration

300

VRRM

Repetitive peak reverse voltage(2)

Pulsed, duration 5 ms, F = 50 Hz

100

IRRM

Repetitive peak reverse current(3)

Pulsed, duration 2 µs, F = 1 kHz

Average output rectified current (50% duty cycle):(4), (5)

per diode

per device

For Tcase ≥ +132°C per device and Tcase ≥ +148°C per diode, derate linearly to 0 A at +175°C.

The “per device” ratings apply only when both anode terminals are tied together.

IF(RMS)

Forward rms current (per diode)

TOP

Operating temperature range(6)

(case temperature)

For devices with hot solder dip lead finish all testing performed at Tamb > +125 °C are carried out in a 100%

inert atmosphere.

-65 to +175

°C

Junction temperature

+175

°C

TSTG

Storage temperature range(6)

-65 to +175

°C

SOL

Soldering temperature:

For TO-254(7)

Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same

lead shall not be resoldered until 3 minutes have elapsed.

+260

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

Table 3.

Thermal resistance

Symbol

Characteristic

Value

Unit

Rth(j-c)

(1)

Package mounted on infinite heatsink

Thermal resistance, junction to case

per diode

per device

1.5

1.2

°C/W

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