ACE632 datasheet(1/11 Pages) ACE

部件名	ACE632

功能描述	The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

PDF	11 Pages

Scroll/Zoom	100%

制造商	ACE [ACE Technology Co., LTD.]

网页	http://www.ace-ele.com

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ACE632

N&P Pair Enhancement Mode MOSFET

VER 1.3

1

Description

The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology. This high density process is especially tailored to

minimize on-state resistance and provide superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer power management and other battery

powered circuits where high-side switching, low in-line power loss, and resistance to transients are

needed.

Features

 N-Channel

20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V

20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V

20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V

 P-Channel

-20V/1.0A,RDS(ON)= 520mΩ@VGS=-4.5V

-20V/0.8A,RDS(ON)= 700mΩ@VGS=-2.5V

-20V/0.7A,RDS(ON)= 950mΩ@VGS=-1.8V

 Super high density cell design for extremely low R

DS(ON)

 Exceptional on-resistance and maximum DC current capability

Application

 Power Management in Note book

 Portable Equipment

 Battery Powered System

 DC/DC Converter

 Load Switch

 DSC

 LCD Display inverter

Absolute Maximum Ratings

(TA=25℃ Unless otherwise noted)

Parameter

Symbol

Typical

Unit

N-Channel P-Channel

Drain-Source Voltage

VDS

20

-20

V

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current (TJ=150℃)

TA=25℃

ID

1.2

-1.0

A

TA=80℃

0.9

-0.7

Pulsed Drain Current

1)

IDM

4

-3

A

Continuous Source Current (Diode Conduction)

IS

0.6

-0.6

Power Dissipation

TA=25℃

PD

0.3

W

TA=70℃

0.19

类似零件编号 - ACE632

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