ACE2302B datasheet(2/6 Pages) ACE

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ACE2302B

N-Channel Enhancement Mode MOSFET

VER 1.2

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

Static

Drain-source breakdown voltage

V(BR)DSS

VGS=0V, ID=250µA

Zero gate voltage drain current

IDSS

VDS=20V, VGS=0V

µA

Gate threshold voltage

VGS(th)

VGS=VDS, IDS=250µA

0.6

0.74

Gate leakage current

IGSS

VGS=±12V, VDS=0V

100

Drain-source on-state resistance

RDS(ON)

VGS=10V, ID=6A

19.5

mΩ

VGS=4.5V, ID=5A

22.6

VGS=2.5V, ID=4A

Forward transconductance

gFS

VDS=10V, ID=6A

Diode forward voltage

VSD

ISD=1.7A, VGS=0V

0.78

Maximum body-diode continuous

current

1.7

Switching

Total gate charge

VGS=4.5V, VDS=10V,

ID=6A

6.3

8.1

Gate-source charge

Qgs

1.7

2.2

Gate-drain charge

Qgd

1.4

1.8

Turn-on delay time

td(on)

VGS=10V, ID=1A

RG=6Ω, VGS=4.5V

10.4

20.8

Turn-on rise time

4.4

8.8

Turn-off delay time

td(off)

27.4

54.8

Turn-off fall time

4.2

8.4

Dynamic

Input capacitance

Ciss

VGS=0V, VDS=8V,

f=1.0MHz

522.3

Output capacitance

Coss

98.5

Reverse transfer capacitance

Crss

74.7

Note :

1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

2. Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

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