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SPC564L54L5 数据表(PDF) 16 Page - STMicroelectronics |
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SPC564L54L5 数据表(HTML) 16 Page - STMicroelectronics |
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16 / 160 page ![]() Introduction SPC56XL60/54 16/160 Doc ID 15457 Rev 8 The following functions are implemented: ● ECC encoding (32-bit boundary for data and complete address bus) ● ECC decoding (32-bit boundary and entire address) ● Address translation from the AHB protocol on the XBAR to the SRAM array The platform SRAM controller is replicated for each processor. 1.5.9 Memory subsystem access time Every memory access the CPU performs requires at least one system clock cycle for the data phase of the access. Slower memories or peripherals may require additional data phase wait states. Additional data phase wait states may also occur if the slave being accessed is not parked on the requesting master in the crossbar. Table 2 shows the number of additional data phase wait states required for a range of memory accesses. 1.5.10 Error Correction Status Module (ECSM) The ECSM on this device manages the ECC configuration and reporting for the platform memories (flash memory and SRAM). It does not implement the actual ECC calculation. A detected error (double error for flash memory or SRAM) is also reported to the FCCU. The following errors and indications are reported into the ECSM dedicated registers: ● ECC error status and configuration for flash memory and SRAM ● ECC error reporting for flash memory ● ECC error reporting for SRAM ● ECC error injection for SRAM Table 2. Platform memory access time summary AHB transfer Data phase wait states Description e200z4d instruction fetch 0 Flash memory prefetch buffer hit (page hit) e200z4d instruction fetch 3 Flash memory prefetch buffer miss (based on 4-cycle random flash array access time) e200z4d data read 0–1 SRAM read e200z4d data write 0 SRAM 32-bit write e200z4d data write 0 SRAM 64-bit write (executed as 2 x 32-bit writes) e200z4d data write 0–2 SRAM 8-,16-bit write (Read-modify-Write for ECC) e200z4d flash memory read 0 Flash memory prefetch buffer hit (page hit) e200z4d flash memory read 3 Flash memory prefetch buffer miss (at 120 MHz; includes 1 cycle of program flash memory controller arbitration) |
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