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STPS2H100-Y 数据表(PDF) 2 Page - STMicroelectronics |
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STPS2H100-Y 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics STPS2H100-Y 2/9 Doc ID 17944 Rev 1 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(AV) Average forward current SMA / SMB TL = 130 °C δ = 0.5 2 A IFSM Surge non repetitive forward current tp =10 ms sinusoidal 75 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 2400 W Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range(1) 1. condition to avoid thermal runaway for a diode on its own heatsink -40 to +175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-l) Junction to lead SMA 30 °C/W SMB 25 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 5 ms, δ < 2% Reverse leakage current Tj = 25 °C VR = VRRM -- 1 µA Tj = 125 °C - 0.4 1 mA VF (2) 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.56 x IF(AV) + 0.045 IF 2 (RMS) Forward voltage drop Tj = 25 °C IF = 2 A - - 0.79 V Tj = 125 °C - 0.6 0.65 Tj = 25 °C IF = 4 A - - 0.88 Tj = 125 °C - 0.69 0.74 dPtot dTj < 1 Rth(j-a) |
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