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STPS5L25 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPS5L25
功能描述  Low drop power Schottky rectifier
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS5L25 数据表(HTML) 2 Page - STMicroelectronics

  STPS5L25_08 Datasheet HTML 1Page - STMicroelectronics STPS5L25_08 Datasheet HTML 2Page - STMicroelectronics STPS5L25_08 Datasheet HTML 3Page - STMicroelectronics STPS5L25_08 Datasheet HTML 4Page - STMicroelectronics STPS5L25_08 Datasheet HTML 5Page - STMicroelectronics STPS5L25_08 Datasheet HTML 6Page - STMicroelectronics STPS5L25_08 Datasheet HTML 7Page - STMicroelectronics  
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Characteristics
STPS5L25
2/7
1
Characteristics
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
25
V
IF(RMS)
RMS forward current
7
A
IF(AV)
Average forward current
TC = 145 °C δ = 0.5
5
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
IRRM
Repetitive peak reverse current
tp = 2 µs square F = 1 kHz
1
A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
2
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
3000
W
Tstg
Storage temperature range
-65 to + 150
°C
Tj
Maximum operating junction temperature (1)
150
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
1.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j
a
()
--------------------------
<
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
2.5
°C/W
Table 4.
Static electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
350
µA
Tj = 125 °C
55
115
mA
VF
(1.)
Forward voltage drop
Tj = 25 °C
IF = 5 A
0.47
V
Tj = 125 °C
IF = 5 A
0.31
0.35
Tj = 25 °C
IF = 10 A
0.59
Tj = 125 °C
IF = 10 A
0.41
0.50
1.
Pulse test: tp = 380 µs,
δ < 2%



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