STPS15L30CDJF datasheet(3/7 Pages) STMICROELECTRONICS

3 / 7 page

STPS15L30CDJF

Characteristics

Doc ID 15664 Rev 4

3/7

Figure 1.

Average forward power dissipation

versus average forward current

(per diode)

Figure 2.

Average forward current versus

ambient temperature

(

δ = 0.5, per diode)

PF(AV)(W)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0123

56789

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

IF(AV)(A)

100

125

150

δ=tp/T

Tamb(°C)

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

(25°C)

ARM (Tj)

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 6.

Relative variation of thermal

impedance, junction to case,

versus pulse duration

IM(A)

100

110

120

1.E-03

1.E-02

1.E-01

1.E+00

c=25°C

c=75°C

c=125°C

δ =0.5

t(s)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

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