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STPS340-Y 数据表(PDF) 2 Page - STMicroelectronics |
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STPS340-Y 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics STPS340-Y 2/8 Doc ID 17390 Rev 1 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 40 V IF(RMS) Forward rms current 6 A IF(AV) Average forward current SMB TL = 95 °C = 0.5 3 A SMC TL = 105 °C = 0.5 3 A IFSM Surge non repetitive forward current tp =10 ms sinusoidal 75 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 1300 W Tstg Storage temperature range -65 to + 150 °C Tj Operating junction temperature (1) range 1. condition to avoid thermal runaway for a diode on its own heatsink -40 to +150 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-l) Junction to lead SMB 25 °C/W SMC 20 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 380 µs, < 2% To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.050 IF 2 (RMS) Reverse leakage current Tj = 25 °C VR = VRRM 20 µA Tj = 125 °C 2 10 mA VF (1) Forward voltage drop Tj = 25 °C IF = 3 A 0.63 V Tj = 125 °C 0.52 0.57 Tj = 25 °C IF = 6 A 0.84 Tj = 125 °C 0.63 0.72 dPtot dTj < 1 Rth(j-a) |
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