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STPS2045CH 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPS2045CH
功能描述  Power Schottky rectifier
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS2045CH 数据表(HTML) 2 Page - STMicroelectronics

  STPS2045CH Datasheet HTML 1Page - STMicroelectronics STPS2045CH Datasheet HTML 2Page - STMicroelectronics STPS2045CH Datasheet HTML 3Page - STMicroelectronics STPS2045CH Datasheet HTML 4Page - STMicroelectronics STPS2045CH Datasheet HTML 5Page - STMicroelectronics STPS2045CH Datasheet HTML 6Page - STMicroelectronics STPS2045CH Datasheet HTML 7Page - STMicroelectronics  
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Characteristics
STPS2045CH
2/7
Doc ID 023045 Rev 1
1
Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔT
j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.015 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS) Forward rms voltage
20
A
IF(AV)
Average forward current
δ = 0.5
Tc = 155 °C
Per diode
10
A
Tc = 150 °C
Per package
20
IFSM
Surge non repetitive forward current
tp = 10 ms sine-wave
150
A
PARM
(1)
Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
280
W
VARM
(2)
Maximum repetitive peak avalanche voltage
tp < 10 µs, Tj < 125 °C, IAR < 4.7 A
60
V
VASM
(2)
Maximum single-pulse peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A
60
V
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature(3)
+ 175
°C
1.
For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements
and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2.
See Figure 8
3.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3.
Thermal resistance parameters
Symbol
Parameter
Value
Unit
Rth (j-c) Junction to case
Per diode
Total
2.50
1.6
°C/W
Rth (c)
Coupling
0.7
°C/W
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
100
µA
Tj = 125 °C
7
15
mA
VF
(2)
Forward voltage drop
Tj = 125 °C
IF = 10 A
0.5
0.57
V
Tj = 25 °C
IF = 20 A
0.84
Tj = 125 °C
0.65
0.72
1.
Pulse test: tp = 5 ms, δ < 2%
2.
Pulse test: tp = 380 µs, δ < 2%



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