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STPS5045S 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPS5045S
功能描述  Power Schottky rectifier
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS5045S 数据表(HTML) 2 Page - STMicroelectronics

  STPS5045S Datasheet HTML 1Page - STMicroelectronics STPS5045S Datasheet HTML 2Page - STMicroelectronics STPS5045S Datasheet HTML 3Page - STMicroelectronics STPS5045S Datasheet HTML 4Page - STMicroelectronics STPS5045S Datasheet HTML 5Page - STMicroelectronics STPS5045S Datasheet HTML 6Page - STMicroelectronics STPS5045S Datasheet HTML 7Page - STMicroelectronics  
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Characteristics
STPS5045S
2/7
Doc ID022861 Rev 1
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.38 x IF(AV) + 0.0036 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS) Forward rms current
90
A
IF(AV)
Average forward current
δ = 0.5
Tc = 135 °C
50
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
600
A
PARM
Repetitive peak avalanche power
tp = 10 µs Tj = 125 °C
1200
W
Tstg
Storage temperature range
-65 to +175
°C
Tj
(1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
Maximum operating junction temperature in DC forward mode(2)
2.
Maximum operating junction temperature only in DC forward mode
+200
°C
Maximum operating junction temperature
+175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
1.0
°C/W
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms, δ < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
0.090
0.36
mA
Tj = 75 °C
VR = 20 V
0.7
1.9
Tj = 125 °C
VR = VRRM
65
185
VF
(2)
2.
Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 50 A
0.55
0.61
V
Tj = 125 °C
0.48
0.56
Tj = 200 °C
IF = 10 A
0.22
IF =20 A
0.28
dPtot
dTj
<
1
Rth(j-a)



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