Characteristics

STPS20150C

4/10

Doc ID 7756 Rev 9

Figure 7.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 8.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAB)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

TO-220AB, I PAK and D PAK

22

t (s)

p

Z/R

th(j-c)

th(j-c)

T

tp

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

TO-220FPAB

t (s)

p

Z/R

th(j-c)

th(j-c)

T

tp

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Figure 9.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 10.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

0

25

50

75

100

125

150

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

1E+5

I (µA)

R

V (V)

R

T =175°C

j

T =150°C

j

T =125°C

j

T =100°C

j

T =25°C

j

1

2

5

10

20

50

100

200

10

100

1000

C(pF)

F=1MHz

T =25°C

j

V (V)

R

Figure 11.

Forward voltage drop versus

forward current (per diode)

Figure 12.

Thermal resistance junction to

ambient versus copper surface

under tab

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.1

1.0

10.0

100.0

I

(A)

FM

V

(V)

FM

T =125°C

(typical values)

j

T =25°C

j

T =125°C

j

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

S(cm²)

R

(°C/W)

th(j-a)

Epoxy printed circuit board, copper thickness = 35 µm

(STPS20150CG only)