Characteristics

STPS30H100C

2/10

Doc ID 6347 Rev 8

1

Characteristics

When the diodes 1 and 2 are used simultaneously:

ΔT

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

100

V

Forward rms current

30

A

Average forward current

δ = 0.5

Per diode

Per device

15

30

A

Surge non repetitive forward current

250

A

Repetitive peak reverse current

1

A

Non repetitive peak reverse current

3

A

Repetitive peak avalanche power

10800

W

Storage temperature range

-65 to + 175

°C

1.

condition to avoid thermal runaway for a diode on its own heatsink

-40 to +175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

Per diode

Total

1.6

0.9

°C/W

Coupling

0.1

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Reverse leakage current

5µA

2

6

mA

(2)

2.

Forward voltage drop

0.80

V

0.64

0.67

0.93

0.74

0.8

dPtot

dTj

---------------

1

Rth j a

–

()

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