STW82103B datasheet(15/67 Pages) STMICROELECTRONICS

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STW82103B

Electrical characteristics

Doc ID 018517 Rev 2

15/67

Electrical characteristics

Note:

Vsupply digital = 3.3 V, Vsupply analog1 = 3.3 V, Vsupply analog2 = 5V, FRF = 2500 MHz,

FLO = 2350 MHz, TA = +25*C, RF power = 0 dBm, unless otherwise specified.

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Table 6.

Down converter mixer and IF amplifier electrical characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

FRF

RF Frequency

2300

2700 MHz

FLO

LO Frequency

VCOA divided by 2

2200

2550 MHz

VCOB

2500

3000 MHz

FIF

IF Center Frequency(2)

FIF = ABS(FLO-FRF)70

400

MHz

Power Conversion Gain

Rin = 50 ohm, Rout = 200 ohm

RFin = 0 dBm

7.5

8.5

CGΔT

Power Conversion Gain over

Temperature(3)

T= -40 to +85 °C

±0.7

IP1dB

Input P1dB

High current Mode

dBm

Low current Mode

IIP3

Third-order input intercept

point(4)

High current Mode

23.5

dBm

Low current Mode

17.5

IIP3ΔT

IIP3 variation over

temperature(3)

T= -40 to +85 °C

±0.5

nFRF-nFLO Spurious rejection at IF

(3)

2FRF-2FLO FRFin = -5 dBm,

FIF = 150 MHz

-80

dBc

3FRF-3FLO FRFin = -5 dBm,

FIF = 150 MHz

-76

dBc

NFSSB

Noise figure

High-current mode, MIX = 0011

10.5

Low-current mode, MIX = 0011

10.5

LO to IF Leakage

1xLO

-45

dBm

2xLO

-38

LO to RF Leakage

-28

dBm

RF to IF Isolation

RFRL

RF Return Loss

Matched to 50 ohm

IFRL

IF Return Loss

Matched to 200 ohm

Gain Flatness for TX

observation path(5)

Maximum deviation from Fc over ±10

MHz. For any Fc within each TX

observation path band.

-0.05

+0.05 dB

Maximum deviation from Fc over ±30

MHz. For any Fc within each TX

observation path band.

-0.10

+0.10 dB

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