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EMIF03-SIM04F3 数据表(PDF) 2 Page - STMicroelectronics |
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EMIF03-SIM04F3 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Electrical characteristics EMIF03-SIM04F3 2/7 Doc ID 17053 Rev 2 1 Electrical characteristics Figure 3. Electrical characteristics (definitions) Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP Internal pins (A1, B1, C1): ESD discharge IEC 61000-4-2, level 1, air discharge ESD discharge IEC 61000-4-2, level 1, contact discharge External pins (A3, B3, C3, D1, D2 and D3): ESD discharge IEC 61000-4-2, level 4, air discharge ESD discharge IEC 61000-4-2, level 4, contact discharge ±2 ±2 ±15 ±15 kV Pd Line resistance power dissipation at 70 °C 60 mW Top Operating temperature range - 40 to + 85 °C Tstg Storage temperature range - 55 to 150 °C Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 6 V IRM VRM = 3 V per line 50 200 nA R1, R3 Tolerance ± 20% 80 100 120 Ω R2 Tolerance ± 20% 37.6 47 56.4 Ω Cline Vline = 0 V, Vosc = 30 mV, F = 1 MHz (measured under zero light conditions)(1) 1. A2 and C2 bumps must be connected together on the printed circuit board 810 12 pF Symbol Parameter V = Breakdown voltage I = Leakage current @ V R = Series resistance between input and output C = Line capacitance BR RM RM I/O line I V VBR VRM IR IRM IRM IR VRM VBR |
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