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L6520 数据表(PDF) 7 Page - STMicroelectronics

部件名 L6520
功能描述  Highly integrated ballast controller for TL and CFL
PDF  19 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6520 数据表(HTML) 7 Page - STMicroelectronics

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L6520, L6521
Electrical characteristics
Doc ID 16998 Rev 3
7/19
VOH
HSD LSD Output high voltage
Iload = 300 mA
13
V
ISRC
HSD LSD Peak source current
300
mA
ISNK
HSD LSD Peak sink current
300
mA
TRISE
HSD LSD Rise time
Cload = 1 nF
120
ns
TFALL
HSD LSD Fall time
Cload = 1 nF
120
ns
IPD
HSD LSD Pull down current
Before turn-on, (VCC = 13V)
VLSD or VHSD = 1V
20
mA
Storage time compensation and hard switching detection
VOUTup
PWM_det PWM detector threshold
Positive going HB middle point
2.65
3
V
VHSW
PWM_det
Hard switching detector
threshold
Negative going HB middle point
2
2.35
V
VP_dclamp PWM_det Clamping voltage
IPWM_det = 2 mA
4.5
5
5.5
V
tHSW
PWM_det
Max. time of hard switching
operation
(4), T
AMB = 25 °C
200
ms
Half bridge current control circuit (CCC)
THL
HBCS
First threshold in ignition
mode
0.96
1
1.04
V
THM
HBCS
Second threshold in ignition
mode
1.21 1.26
1.31
V
THH
HBCS
Third threshold in ignition
mode
2.4
2.5
2.6
V
TLL
HBCS
First threshold in run mode
0.67
0.7
0.73
V
TLM
HBCS
Second threshold in run mode
0.87
0.9
0.93
V
TLH
HBCS
Third threshold in run mode
1.7
1.8
1.9
V
TPROT
Maximum current control time (4), TAMB = 25 °C
200
ms
t1
HBCS
Minimum interval between two
consecutive threshold
crossing for slow events
(4), T
AMB = 25 °C
510
ns
t2
HBCS
Minimum interval between two
consecutive threshold
crossing for fast events (not
saturating)
(4), T
AMB = 25 °C
255
ns
∆fTxL
HBCS
Frequency increase in case of
lower threshold crossing
(4), T
AMB = 25 °C
1
kHz
∆fslow
HBCS
Frequency increase in case of
slow event
(4), T
AMB = 25 °C
1
kHz
∆ffast
HBCS
Frequency increase in case of
fast event
(4), T
AMB = 25 °C
2
kHz
Table 5.
Electrical characteristics (continued)
Symbol
Pin
Parameter
Test condition
Min. Typ. Max.
Unit



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