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SRI4K 数据表(PDF) 39 Page - STMicroelectronics |
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SRI4K 数据表(HTML) 39 Page - STMicroelectronics |
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39 / 46 page ![]() SRI4K DC and ac parameters Doc 11605 Rev 5 39/46 10 DC and ac parameters Table 7. Operating conditions Symbol Parameter Min. Max. Unit TA Ambient operating temperature –20 85 °C Table 8. DC characteristics Symbol Parameter Condition Min Typ Max Unit VCC Regulated voltage 2.5 3.5 V ICC Supply current (active in read) VCC = 3.0 V 100 µA ICC Supply current (active in write) VCC = 3.0 V 250 µA VRET Retromodulation induced voltage ISO 10373-6 20 mV CTUN Internal tuning capacitor 13.56 MHz 64 pF Table 9. AC characteristics(1) Symbol Parameter Condition Min Max Unit fCC External RF signal frequency 13.553 13.567 MHz MICARRIER Carrier modulation index MI=(A-B)/(A+B) 8 14 % tRFR,tRFF 10% Rise and Fall times 0.8 2.5 µs tRFSBL Minimum pulse width for Start bit ETU = 128/fCC 9.44 µs tJIT ASK modulation data jitter Coupler to SRI4K –2 +2 µs tMIN CD Minimum time from carrier generation to first data 5ms fS Subcarrier frequency fCC/16 847.5 kHz t0 Antenna reversal delay 128/fS 151 µs t1 Synchronization delay 128/fS 151 µs t2 Answer to new request delay 14 ETU 132 µs tDR Time between request characters Coupler to SRI4K 0 57 µs tDA Time between answer characters SRI4K to coupler 0 µs tW Programming time for write With no auto-erase cycle (OTP) 3ms With auto-erase cycle (EEPROM) 5ms Binary counter decrement 7ms |
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