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HT32F1253 数据表(PDF) 22 Page - Holtek Semiconductor Inc |
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HT32F1253 数据表(HTML) 22 Page - Holtek Semiconductor Inc |
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22 / 35 page ![]() Rev. 1.10 �� of �5 ���i� 1�� �01� ��-bit �RM Co�tex™-M� MCU HT��F1�51/51B/5�/5� 4 Electrical Characteristics Absolute Maximum Ratings The following table shows the absolute maximum ratings of the device. These are stress ratings only. Stresses beyond absolute maximum ratings may cause permanent damage to the device. Note that the device is not guaranteed to operate properly at the maximum ratings. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. Table 3. Absolute Maximum Ratings Symbol Parameter Min Max Unit VDD�� Exte�na� main su���y vo�tage VSS - 0.� VSS + �.6 V VDD� Exte�na� ana�og su���y vo�tage VSS� - 0.� VSS� + �.6 V VB�T Exte�na� batte�y su���y vo�tage VSS - 0.� VSS + �.6 V VLDOIN Exte�na� LDO su���y vo�tage VSS - 0.� VSS + �.6 V VIN In�ut vo�tage on 5V-to�e�ant I/O VSS - 0.� VSS + 5.5 V In�ut vo�tage on othe� I/O VSS - 0.� VDD�� + 0.� V T� �mbient o�e�ating tem�e�atu�e �ange -40 +85 °C TSTG Sto�age tem�e�atu�e �ange -55 +150 °C TJ Maximum junction tem�e�atu�e — 1�5 °C PD Tota� �owe� dissi�ation — 500 mW VESD E�ect�ostatic discha�ge vo�tage (human body mode) -4000 +4000 V DC Characteristics Table 4. DC Operating Conditions TA = 25°C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VDD�� O�e�ating vo�tage of I/O — �.7 �.� �.6 V VDD� �na�og o�e�ating vo�tage — �.7 �.� �.6 V VB�T O�e�ating vo�tage of Batte�y su���y — �.7 �.� �.6 V VLDOIN LDO o�e�ating vo�tage — �.7 �.� �.6 V VDD18 O�e�ating vo�tage of co�e �owe� — 1.6� 1.8 1.98 V On-Chip LDO Voltage Regulator Characteristics Table 5. LDO Characteristics T� = �5°C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VLDOOUT Inte�na� �egu�ato� out�ut vo�tage VLDOIN = �.�V Regu�ato� in�ut 1.71 1.8 1.89 V IDD18 Out�ut cu��ent VLDOIN = �.4V Regu�ato� in�ut — — �00 m� CLDO External filter capacitor value for inte�na� co�e �owe� su���y The ca�acito� va�ue is de�endent on the co�e �owe� cu��ent consum�tion �.� — 10 μF |
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