Description

The SGM2016AM/AP is an N-channel dual-gate

GaAs MES FET for UHF-band low-noise amplification.

This FET is suitable for a wide range of applications

including UHF TV tuners, cellular/cordless phone,

and DBS IF amplifiers.

Features

• Low voltage operation

• Low noise NF = 1.2dB (typ.) at 900MHz

• High gain Ga = 21dB (typ.) at 900MHz

• High stability

• Built-in gate protection diode

Application

UHF-band high-frequency amplifier, mixer, and oscillator

Structure

GaAs, N-channel, dual-gate metal semiconductor field-effect transistor

Absolute Maximum Ratings (Ta = 25°C)

• Drain to source voltage

12

V

• Gate 1 to source voltage

–5

V

• Gate 2 to source voltage

–5

V

• Drain current

55

mA

150

mW

• Channel temperature

Tch

150

°C

• Storage temperature

Tstg

–55 to +150

°C

– 1 –

SGM2016AM/AP

E96Y10-PS

GaAs N-channel Dual-Gate MES FET

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

SGM2016AM

SGM2016AP

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