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BUW13 数据表(PDF) 2 Page - Comset Semiconductor |
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BUW13 数据表(HTML) 2 Page - Comset Semiconductor |
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2 / 3 page ![]() NPN BUW13 - BUW13A 29/09/2012 COMSET SEMICONDUCTORS 2/3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100 mA , IB= 0 A L= 25 mH BUW13 400 - - V BUW13A 450 - - ICES Collector Cutoff Current VCE= VCEMax VBE= 0 V BUW13 - - 1 mA BUW13A VCE= VCEMax, VBE= 0 V Tcase = 125°C BUW13 - - 4 BUW13A IEBO Emitter Cutoff Current VEB= 9 V, IC= 0 A BUW13 - - 10 mA BUW13A VCE(SAT) Collector-Emitter saturation Voltage IC= 10 A , IB= 2 A BUW13 - - 1.5 V IC= 8 A , IB= 1.6 A BUW13A VBE(SAT) Base-Emitter saturation Voltage IC= 10 A , IB= 2 A BUW13 - - 1.6 IC= 8 A , IB= 1.6 A BUW13A hFE DC Current Gain IC=20 mA , VCE=5 V BUW13 10 - 35 - BUW13A IC=1.5 A , VCE=5 V BUW13 10 - 35 BUW13A SWITCHING TIMES Symbol Ratings Test Condition(s) Min Typ Mx Unit ton Turn-on time For BUW13 IC= 10 A , IB1 = -IB2 = 2 A For BUW13A IC= 8 A , IB1 = -IB2 = 1.6 A - 1.2 1.5 µs ts Storage time - 0.6 1.1 tf File time - 0.17 0.25 |
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