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IRF830 数据表(PDF) 2 Page - Comset Semiconductor

部件名 IRF830
功能描述  N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
PDF  3 Pages
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制造商  COMSET [Comset Semiconductor]
网页  http://comset.halfin.com
标志 COMSET - Comset Semiconductor

IRF830 数据表(HTML) 2 Page - Comset Semiconductor

  IRF830 Datasheet HTML 1Page - Comset Semiconductor IRF830 Datasheet HTML 2Page - Comset Semiconductor IRF830 Datasheet HTML 3Page - Comset Semiconductor  
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IRF830
2/3
09/11/2012
COMSET SEMICONDUCTORS
SEMICONDUCTORS
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
VDSS
Drain-Source Breakdown
Voltage
ID= 250 µA, VGS= 0 V
500
-
-
V
VGS(th)
Gate-threshold Voltage
ID= 250 µA, VGS= VDS
2
3
4
V
IDSS
Zero Gate Voltage Drain
Current
VDS= 500 V, VGS= 0 V
Tj= 25 °C
-
-
25
µA
VDS= 500 V, VGS= 0 V
Tj= 125 °C
-
-
250
IGSS
Gate-Source leakage
Current
VGS= 20 V, VDS= 0 V
-
-
100
nA
RDS(on)
Drain-Source on Resistance
ID= 2.7 A, VGS= 10 V
-
-
1.5
Ω
DYNAMIC CHARACTERISTICS
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
gfs
Transconductance
VDS >ID(on)*RDS(on)max
ID= 2.5 A
2.5
-
-
S
CISS
Input Capacitance
VGS= 0 V, VDS= 25 V
f= 1MHz
-
-
800
pF
COSS
Output Capacitance
-
-
200
CRSS
Reverse transfer
Capacitance
-
-
60
td(on)
Turn-on Delay Time
VDD= 225 V,
ID= 2.5 A, RGS= 15 Ω
-
-
30
ns
tr
Rise time
-
-
30
td(off)
Turn-off Delay Time
-
-
55
tf
Fall Time
-
-
30
REVERSE DIODE
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
IS
Inverse Diode Continuous
Forward Current.
TC = 25°C
-
-
4.5
A
ISM
Inverse diode direct current,
pulsed.
TC = 25°C
-
-
18
VSD
Inverse Diode Forward
voltage
VGS = 0 V, IF = 4.5 A
-
-
1.6
V
Trr
Reverse Recovery Time
IF = 3.1 A
di/dt = 100 A/µs
-
320
640
ns
Qrr
Reverse Recovery Charge
-
1
2
µC



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