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MSS40 数据表(PDF) 2 Page - Comset Semiconductor |
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MSS40 数据表(HTML) 2 Page - Comset Semiconductor |
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2 / 4 page ![]() MSS40 / MSS50 Series 29/10/2012 COMSET SEMICONDUCTORS 2 | 4 SEMICONDUCTORS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit MSS40 MSS50 IT(RMS) RMS on-state current TC = 80 °C 55 - A TC = 85 °C - 70 ITSM Non repetitive surge peak on-state current tp = 16.7ms Tj = 25 °C 420 630 A tp = 20ms 400 600 I 2t I 2t Value for fusing tp = 10ms Tj = 25 °C 800 1800 A 2s Dl/dt Critical rate of rise of on- state current IG = 2xIGT, tr ≤ 100ns F = 120Hz Tj = 125 °C 50 A/µs IGM Peak gate current tp = 20µs Tj = 125 °C 4 A PG(AV) Average gate power dissipation Tj = 125 °C 1 W Tj Operating junction temperature range -40 to +125 °C Tstg Storage junction temperature range -40 to +150 VRGM Maximum peak reverse gate voltage 5 V THERMAL CHARACTERISTICS Symbol Ratings Value Unit Rth(j-c) Junction to case (AC) MSS40 0.6 °C/W MSS50 0.45 |
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